Fachinformationsdienst BAUdigital

A platform for research: civil engineering, architecture and urbanism

    Co-sputtered TiB~2 as a diffusion barrier for advanced microelectronics with Cu metallization

    New search for: Sade, G.
    New search for: Pelleg, J.
    New search for: Gessner, T.
    New search for: Schulz, S. E.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Co-sputtered TiB~2 as a diffusion barrier for advanced microelectronics with Cu metallization

    New search for: Sade, G.
    New search for: Pelleg, J.
    New search for: Gessner, T.
    New search for: Schulz, S. E.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Co-sputtered TiB~2 as a diffusion barrier for advanced microelectronics with Cu metallization

    New search for: Sade, G.
    New search for: Pelleg, J.
    New search for: Gessner, T.
    New search for: Schulz, S. E.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Co-sputtered TiB~2 as a diffusion barrier for advanced microelectronics with Cu metallization

    Contributors:

    Sade, G. (author) / Pelleg, J. (author) / Gessner, T. / Schulz, S. E.

    Published in:

    Materials for Advanced Metallization ; 263-268

    APPLIED SURFACE SCIENCE ; 91

    Publication date:

    1996-01-01

    Size:

    6 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.35

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

    Similar titles

    Electrical characterization of reactively sputtered TiN diffusion barrier layers for copper metallization

    Kaufmann, C. / Baumann, J. / Gessner, T. et al. | British Library Online Contents | 1996

    Atom beam sputtered Mo2C films as a diffusion barrier for copper metallization

    Tripathi, C. C. / Kumar, M. / Kumar, D. | British Library Online Contents | 2009

    Ti-diffusion barrier in Cu-based metallization

    Braud, F. / Torres, J. / Palleau, J. et al. | British Library Online Contents | 1996

    Sputtered Cu Films Containing Various Insoluble Substances for Advanced Barrierless Metallization

    Chu, J. P. / Lin, C. H. | British Library Online Contents | 2007

    Ultrathin Mo/MoN bilayer nanostructure for diffusion barrier application of advanced Cu metallization

    Zhao, B. / Sun, K. / Song, Z. et al. | British Library Online Contents | 2010

    Back to top