Compressively strained Ge channels on relaxed SiGe buffer layers

Bollani, M. / Muller, E. / Signoretti, S. et al. | British Library Online Contents | 2003

Fabrication of 50 nm high performance strained-SiGe pMOSFETs with selective epitaxial growth

Loo, R. / Collaert, N. / Verheyen, P. et al. | British Library Online Contents | 2004

Short channel effect improved strained-Si:C-source/drain PMOSFETs

Lee, M. H. / Chang, S. T. / Maikap, S. et al. | British Library Online Contents | 2008

Mobility-limiting mechanisms in single and dual channel strained Si/SiGe MOSFETs

Olsen, S. H. / Dobrosz, P. / Escobedo-Cousin, E. et al. | British Library Online Contents | 2005

A semiempirical surface scattering model for quantum corrected Monte-Carlo simulation of unstrained Si and strained Si/SiGe PMOSFETs

Pham, A. T. / Jungemann, C. / Nguyen, C. D. et al. | British Library Online Contents | 2006