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Vertical 100 nm Si-p channel JFET grown by selective epitaxy

Langen, W. / Vescan, L. / Loo, R. / Lueth, H. / Kordos, P.

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Vertical 100 nm Si-p channel JFET grown by selective epitaxy

Langen, W. / Vescan, L. / Loo, R. / Lueth, H. / Kordos, P.

Vertical 100 nm Si-p channel JFET grown by selective epitaxy

Langen, W. / Vescan, L. / Loo, R. / Lueth, H. / Kordos, P.

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Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Vertical 100 nm Si-p channel JFET grown by selective epitaxy

Contributors:

Langen, W. (author) / Vescan, L. (author) / Loo, R. (author) / Lueth, H. (author) / Kordos, P. (author)

Published in:

APPLIED SURFACE SCIENCE ; 102 ; 252-254

Publication date:

1996-01-01

Size:

3 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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