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Plasma assisted oxidation of SiGe layers at 500C: interface characterization
Plasma assisted oxidation of SiGe layers at 500C: interface characterization
Plasma assisted oxidation of SiGe layers at 500C: interface characterization
Tetelin, C. (author) / Wallart, X. (author) / Vescan, L. (author) / Nys, J. P. (author)
APPLIED SURFACE SCIENCE ; 104/105 ; 385-391
1996-01-01
7 pages
Article (Journal)
English
DDC:
621.35
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