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Plasma assisted oxidation of SiGe layers at 500C: interface characterization
Plasma assisted oxidation of SiGe layers at 500C: interface characterization
Plasma assisted oxidation of SiGe layers at 500C: interface characterization
Tetelin, C. (Autor:in) / Wallart, X. (Autor:in) / Vescan, L. (Autor:in) / Nys, J. P. (Autor:in)
APPLIED SURFACE SCIENCE ; 104/105 ; 385-391
01.01.1996
7 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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