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    Characteristics of dielectric layers formed by low-temperature vacuum ultraviolet-assisted oxidation of SiGe layers

    New search for: Craciun, V.
    New search for: Boyd, I. W.
    New search for: Perriere, J.
    New search for: Hutton, B.
    New search for: Nicholls, E. J.

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    Characteristics of dielectric layers formed by low-temperature vacuum ultraviolet-assisted oxidation of SiGe layers

    New search for: Craciun, V.
    New search for: Boyd, I. W.
    New search for: Perriere, J.
    New search for: Hutton, B.
    New search for: Nicholls, E. J.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Characteristics of dielectric layers formed by low-temperature vacuum ultraviolet-assisted oxidation of SiGe layers

    New search for: Craciun, V.
    New search for: Boyd, I. W.
    New search for: Perriere, J.
    New search for: Hutton, B.
    New search for: Nicholls, E. J.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

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    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Characteristics of dielectric layers formed by low-temperature vacuum ultraviolet-assisted oxidation of SiGe layers

    Contributors:

    Craciun, V. (author) / Boyd, I. W. (author) / Perriere, J. (author) / Hutton, B. (author) / Nicholls, E. J. (author)

    Published in:

    JOURNAL OF MATERIALS RESEARCH -PITTSBURGH- ; 14 ; 3525-3529

    Publication date:

    1999-01-01

    Size:

    5 pages

    ISSN:

    0884-2914

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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