Ultrathin InAs and modulated InGaAs layers in GaAs grown by MOVPE studied by photomodulated reflectance spectroscopy

Hazdra, P. / Voves, J. / Hulicius, E. et al. | British Library Online Contents | 2006

In-situ spectroscopic ellipsometry and reflectance difference spectroscopy of GaAs(001) surface reconstructions

Wassermeier, M. / Behrend, J. / Zettler, J.-T. et al. | British Library Online Contents | 1996

In situ reflectance monitoring in MOVPE of a multiwafer reactor

Weeks, K. J. / Irvine, S. J. / Stafford, A. et al. | British Library Online Contents | 2001

On the development of InAs on GaAs(001) as measured by reflectance anisotropy spectroscopy: continuous and islanded films

Westwood, D. I. / Sobiesierski, Z. / Steimetz, E. et al. | British Library Online Contents | 1998

Surface morphology and Raman scattering in GaAs/InAs(111) heterostructures grown by MOVPE

Attolini, G. / Chimenti, E. / Pelosi, C. et al. | British Library Online Contents | 1997