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Impact of nitrogen concentration profile in silicon oxynitride films on stress-induced leakage current

Arakawa, T. / Matsumoto, R.

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Impact of nitrogen concentration profile in silicon oxynitride films on stress-induced leakage current

Arakawa, T. / Matsumoto, R.

Impact of nitrogen concentration profile in silicon oxynitride films on stress-induced leakage current

Arakawa, T. / Matsumoto, R.

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Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Impact of nitrogen concentration profile in silicon oxynitride films on stress-induced leakage current

Contributors:

Arakawa, T. (author) / Matsumoto, R. (author)

Published in:

APPLIED SURFACE SCIENCE ; 113/114 ; 605-609

Publication date:

1997-01-01

Size:

5 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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