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Diffusivity and surface transition rate of positrons in crystalline silicon as a function of dopant concentration
Diffusivity and surface transition rate of positrons in crystalline silicon as a function of dopant concentration
Diffusivity and surface transition rate of positrons in crystalline silicon as a function of dopant concentration
Bauer-Kugelmann, W. (author) / Duffy, J. A. (author) / Stoermer, J. (author) / Koegel, G. (author) / Triftshaeuser, W. (author)
APPLIED SURFACE SCIENCE ; 116 ; 231-235
1997-01-01
5 pages
Article (Journal)
English
DDC:
621.35
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