Damage annealing and dopant activation in Al ion implanted �-SiC: Fid-Bau Portal

Damage annealing and dopant activation in Al ion implanted -SiC

Canut, B. / Ramos, S. / Roger, J.-A. / Chante, J.-P. / Locatelli, M.-L. / Planson, D.

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Damage annealing and dopant activation in Al ion implanted -SiC

Canut, B. / Ramos, S. / Roger, J.-A. / Chante, J.-P. / Locatelli, M.-L. / Planson, D.

Damage annealing and dopant activation in Al ion implanted -SiC

Canut, B. / Ramos, S. / Roger, J.-A. / Chante, J.-P. / Locatelli, M.-L. / Planson, D.

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Check availability in my library

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Document information

Title:

Damage annealing and dopant activation in Al ion implanted -SiC

Contributors:

Canut, B. (author) / Ramos, S. (author) / Roger, J.-A. (author) / Chante, J.-P. (author) / Locatelli, M.-L. (author) / Planson, D. (author) / Camassel, J. / Fricke, K. / Krozer, V. / Robert, J. L.

Published in:

High Temperature Electronics: Materials, Devices and Applications ; 267-270

MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 46

Publication date:

1997-01-01

Size:

4 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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