Influence of Annealing Conditions on Dopant Activation of Si^+ and Mg^+ Implanted GaN: Fid-Bau Portal

Influence of Annealing Conditions on Dopant Activation of Si^+ and Mg^+ Implanted GaN

Suvkhanov, A. / Parikh, N. / Usov, I. / Hunn, J. / Withrow, S. / Thomson, D. / Gehrke, T. / Davis, R. F. / Krasnobaev, L. Y.

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Influence of Annealing Conditions on Dopant Activation of Si^+ and Mg^+ Implanted GaN

Suvkhanov, A. / Parikh, N. / Usov, I. / Hunn, J. / Withrow, S. / Thomson, D. / Gehrke, T. / Davis, R. F. / Krasnobaev, L. Y.

Influence of Annealing Conditions on Dopant Activation of Si^+ and Mg^+ Implanted GaN

Suvkhanov, A. / Parikh, N. / Usov, I. / Hunn, J. / Withrow, S. / Thomson, D. / Gehrke, T. / Davis, R. F. / Krasnobaev, L. Y.

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Document information

Title:

Influence of Annealing Conditions on Dopant Activation of Si^+ and Mg^+ Implanted GaN

Contributors:

Suvkhanov, A. (author) / Parikh, N. (author) / Usov, I. (author) / Hunn, J. (author) / Withrow, S. (author) / Thomson, D. (author) / Gehrke, T. (author) / Davis, R. F. (author) / Krasnobaev, L. Y. (author)

Published in:

MATERIALS SCIENCE FORUM ; 338/342 ; 1615-1618

Publication date:

2000-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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