Effect of Dopant Concentrations and Annealing Conditions on the Electrically Active Profiles and Lattice Damage in Al Implanted 4H-SiC: Fid-Bau Portal

Effect of Dopant Concentrations and Annealing Conditions on the Electrically Active Profiles and Lattice Damage in Al Implanted 4H-SiC

Weng, M.H. / Roccaforte, F. / Giannazzo, F. / Di Franco, S. / Bongiorno, C. / Saggio, M. / Raineri, V.

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Effect of Dopant Concentrations and Annealing Conditions on the Electrically Active Profiles and Lattice Damage in Al Implanted 4H-SiC

Weng, M.H. / Roccaforte, F. / Giannazzo, F. / Di Franco, S. / Bongiorno, C. / Saggio, M. / Raineri, V.

Effect of Dopant Concentrations and Annealing Conditions on the Electrically Active Profiles and Lattice Damage in Al Implanted 4H-SiC

Weng, M.H. / Roccaforte, F. / Giannazzo, F. / Di Franco, S. / Bongiorno, C. / Saggio, M. / Raineri, V.

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Title:

Effect of Dopant Concentrations and Annealing Conditions on the Electrically Active Profiles and Lattice Damage in Al Implanted 4H-SiC

Contributors:

Weng, M.H. (author) / Roccaforte, F. (author) / Giannazzo, F. (author) / Di Franco, S. (author) / Bongiorno, C. (author) / Saggio, M. (author) / Raineri, V. (author) / Bauer, A.J. / Friedrichs, P. / Krieger, M.

Published in:

Silicon Carbide and Related Materials 2009 ; 713-716

MATERIALS SCIENCE FORUM ; 645/648

Publication date:

2010-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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