V-shaped defects in In~xGa~1~-~xAs/In~0~.~5~2Al~0~.~4~8As/InP pseudomorphic high electron mobility transistor structure: Fid-Bau Portal

V-shaped defects in In~xGa~1~-~xAs/In~0~.~5~2Al~0~.~4~8As/InP pseudomorphic high electron mobility transistor structure

Lee, H. G. / Kim, S. G. / Roh, D. W. / Lee, J. J. / Pyun, K. E.

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V-shaped defects in In~xGa~1~-~xAs/In~0~.~5~2Al~0~.~4~8As/InP pseudomorphic high electron mobility transistor structure

Lee, H. G. / Kim, S. G. / Roh, D. W. / Lee, J. J. / Pyun, K. E.

V-shaped defects in In~xGa~1~-~xAs/In~0~.~5~2Al~0~.~4~8As/InP pseudomorphic high electron mobility transistor structure

Lee, H. G. / Kim, S. G. / Roh, D. W. / Lee, J. J. / Pyun, K. E.

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Title:

V-shaped defects in In~xGa~1~-~xAs/In~0~.~5~2Al~0~.~4~8As/InP pseudomorphic high electron mobility transistor structure

Contributors:

Lee, H. G. (author) / Kim, S. G. (author) / Roh, D. W. (author) / Lee, J. J. (author) / Pyun, K. E. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 47 ; 145-149

Publication date:

1997-01-01

Size:

5 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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