Thermal annealing of interface traps and trapped charges induced by irradiation in oxides of 3C-SiC metal-oxide-semiconductor structures: Fid-Bau Portal

Thermal annealing of interface traps and trapped charges induced by irradiation in oxides of 3C-SiC metal-oxide-semiconductor structures

Yoshikawa, M. / Nemoto, N. / Itoh, H. / Nashiyama, I. / Okumura, H. / Misawa, S. / Yoshida, S.

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Thermal annealing of interface traps and trapped charges induced by irradiation in oxides of 3C-SiC metal-oxide-semiconductor structures

Yoshikawa, M. / Nemoto, N. / Itoh, H. / Nashiyama, I. / Okumura, H. / Misawa, S. / Yoshida, S.

Thermal annealing of interface traps and trapped charges induced by irradiation in oxides of 3C-SiC metal-oxide-semiconductor structures

Yoshikawa, M. / Nemoto, N. / Itoh, H. / Nashiyama, I. / Okumura, H. / Misawa, S. / Yoshida, S.

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Title:

Thermal annealing of interface traps and trapped charges induced by irradiation in oxides of 3C-SiC metal-oxide-semiconductor structures

Contributors:

Yoshikawa, M. (author) / Nemoto, N. (author) / Itoh, H. (author) / Nashiyama, I. (author) / Okumura, H. (author) / Misawa, S. (author) / Yoshida, S. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 47 ; 218-223

Publication date:

1997-01-01

Size:

6 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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