Thermal annealing of interface traps and trapped charges induced by irradiation in oxides of 3C-SiC metal-oxide-semiconductor structures: Fid-Bau Portal

Thermal annealing of interface traps and trapped charges induced by irradiation in oxides of 3C-SiC metal-oxide-semiconductor structures

Yoshikawa, M. / Nemoto, N. / Itoh, H. / Nashiyama, I. / Okumura, H. / Misawa, S. / Yoshida, S.

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Thermal annealing of interface traps and trapped charges induced by irradiation in oxides of 3C-SiC metal-oxide-semiconductor structures

Yoshikawa, M. / Nemoto, N. / Itoh, H. / Nashiyama, I. / Okumura, H. / Misawa, S. / Yoshida, S.

Thermal annealing of interface traps and trapped charges induced by irradiation in oxides of 3C-SiC metal-oxide-semiconductor structures

Yoshikawa, M. / Nemoto, N. / Itoh, H. / Nashiyama, I. / Okumura, H. / Misawa, S. / Yoshida, S.

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Titel:

Thermal annealing of interface traps and trapped charges induced by irradiation in oxides of 3C-SiC metal-oxide-semiconductor structures

Beteiligte:

Yoshikawa, M. (Autor:in) / Nemoto, N. (Autor:in) / Itoh, H. (Autor:in) / Nashiyama, I. (Autor:in) / Okumura, H. (Autor:in) / Misawa, S. (Autor:in) / Yoshida, S. (Autor:in)

Erschienen in:

MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 47 ; 218-223

Erscheinungsdatum:

01.01.1997

Format / Umfang:

6 pages

ISSN:

0921-5107

Medientyp:

Aufsatz (Zeitschrift)

Format:

Sprache:

Englisch

Klassifikation:

DDC: 620.11

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