Fachinformationsdienst BAUdigital

A platform for research: civil engineering, architecture and urbanism

    Effects of Successive Annealing of Oxides on Electrical Characteristics of Silicon Carbide Metal-Oxide-Semiconductor Structures

    New search for: Yoshikawa, M.
    New search for: Satoh, M.
    New search for: Ohshima, T.
    New search for: Itoh, H.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Effects of Successive Annealing of Oxides on Electrical Characteristics of Silicon Carbide Metal-Oxide-Semiconductor Structures

    New search for: Yoshikawa, M.
    New search for: Satoh, M.
    New search for: Ohshima, T.
    New search for: Itoh, H.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Effects of Successive Annealing of Oxides on Electrical Characteristics of Silicon Carbide Metal-Oxide-Semiconductor Structures

    New search for: Yoshikawa, M.
    New search for: Satoh, M.
    New search for: Ohshima, T.
    New search for: Itoh, H.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Effects of Successive Annealing of Oxides on Electrical Characteristics of Silicon Carbide Metal-Oxide-Semiconductor Structures

    Contributors:

    Yoshikawa, M. (author) / Satoh, M. (author) / Ohshima, T. (author) / Itoh, H. (author)

    Published in:

    MATERIALS SCIENCE FORUM ; 389/393 ; 1009-1012

    Publication date:

    2002-01-01

    Size:

    4 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

    Similar titles

    Effects of Steam Annealing on Electrical Characteristics of 3C-SiC Metal-Oxide-Semiconductor Structures

    Yoshikawa, M. / Kojima, K. / Ohshima, T. et al. | British Library Online Contents | 2000

    Photoluminescent properties of silicon carbide and porous silicon carbide after annealing

    Lee, K. H. / Lee, S. K. / Jeon, K. S. | British Library Online Contents | 2009

    Thermal annealing of interface traps and trapped charges induced by irradiation in oxides of 3C-SiC metal-oxide-semiconductor structures

    Yoshikawa, M. / Nemoto, N. / Itoh, H. et al. | British Library Online Contents | 1997

    Defect annealing in ion implanted silicon carbide

    Calcagno, L. / Grimaldi, M. G. / Musumeci, P. | British Library Online Contents | 1997

    Reliability and Degradation of Metal-Oxide-Semiconductor Capacitors on 4H- and 6H-Silicon Carbide

    Treu, M. / Schorner, R. / Friedrichs, P. et al. | British Library Online Contents | 2000

    Back to top