A platform for research: civil engineering, architecture and urbanism
Effect of thermal annealing on the microstructure of ytterbium-implanted silicon wafers
Effect of thermal annealing on the microstructure of ytterbium-implanted silicon wafers
Effect of thermal annealing on the microstructure of ytterbium-implanted silicon wafers
Yang, Y. (author) / Chen, H. (author) / Zhou, Y. Q. (author) / Li, F. H. (author)
JOURNAL OF MATERIALS SCIENCE ; 32 ; 6665-6670
1997-01-01
6 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Strain relaxation of Ge-implanted silicon wafers
British Library Online Contents | 2006
|Secondary ion mass spectrometry characterization of indium-implanted silicon wafers
British Library Online Contents | 2004
|Defect annealing in ion implanted silicon carbide
British Library Online Contents | 1997
|A Light-Induced Annealing of Silicon Implanted Layers
British Library Online Contents | 2008
|British Library Online Contents | 2005
|