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Strain relaxation of Ge-implanted silicon wafers

Xiao, Q. / Tu, H. / Zhou, Q. / Chang, Q.

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Strain relaxation of Ge-implanted silicon wafers

Xiao, Q. / Tu, H. / Zhou, Q. / Chang, Q.

Strain relaxation of Ge-implanted silicon wafers

Xiao, Q. / Tu, H. / Zhou, Q. / Chang, Q.

Access

Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Strain relaxation of Ge-implanted silicon wafers

Contributors:

Xiao, Q. (author) / Tu, H. (author) / Zhou, Q. (author) / Chang, Q. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 134 ; 159-164

Publication date:

2006-01-01

Size:

6 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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