A platform for research: civil engineering, architecture and urbanism
Direct determination of the initial thermal evolution behaviour of the platelet defects in hydrogen implanted silicon wafers
MATERIALS SCIENCE AND TECHNOLOGY -LONDON- ; 21 ; 739-742
2005-01-01
4 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
British Library Online Contents | 2005
|Strain relaxation of Ge-implanted silicon wafers
British Library Online Contents | 2006
|Thermal Evolution of Defects in H-Implanted Silicon Investigated by Slow Positrons
British Library Online Contents | 1995
|Effect of thermal annealing on the microstructure of ytterbium-implanted silicon wafers
British Library Online Contents | 1997
|Interface Defects of Bonded Silicon Wafers
British Library Online Contents | 1995
|