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    Ion Implantation Doping in SiC and its Device Applications

    New search for: Rao, M. V.
    New search for: Gardner, J.
    New search for: Edwards, A.
    New search for: Papanicolaou, N. A.
    New search for: Kelner, G.
    New search for: Holland, O. W.
    New search for: Ghezzo, M.
    New search for: Kretchmer, J.

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    Ion Implantation Doping in SiC and its Device Applications

    New search for: Rao, M. V.
    New search for: Gardner, J.
    New search for: Edwards, A.
    New search for: Papanicolaou, N. A.
    New search for: Kelner, G.
    New search for: Holland, O. W.
    New search for: Ghezzo, M.
    New search for: Kretchmer, J.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Ion Implantation Doping in SiC and its Device Applications

    New search for: Rao, M. V.
    New search for: Gardner, J.
    New search for: Edwards, A.
    New search for: Papanicolaou, N. A.
    New search for: Kelner, G.
    New search for: Holland, O. W.
    New search for: Ghezzo, M.
    New search for: Kretchmer, J.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

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    Document information
    Title:

    Ion Implantation Doping in SiC and its Device Applications

    Contributors:

    Rao, M. V. (author) / Gardner, J. (author) / Edwards, A. (author) / Papanicolaou, N. A. (author) / Kelner, G. (author) / Holland, O. W. (author) / Ghezzo, M. (author) / Kretchmer, J. (author)

    Published in:

    MATERIALS SCIENCE FORUM ; 264/268 ; 717-720

    Publication date:

    1998-01-01

    Size:

    4 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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