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Stoichiometric Disturbances in Ion Implanted Silicon Carbide

Morvan, E. / Monserrat, J. / Rebollo, J. / Flores, D. / Jorda, X. / Locatelli, M. L. / Ottaviani, L.

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Stoichiometric Disturbances in Ion Implanted Silicon Carbide

Morvan, E. / Monserrat, J. / Rebollo, J. / Flores, D. / Jorda, X. / Locatelli, M. L. / Ottaviani, L.

Stoichiometric Disturbances in Ion Implanted Silicon Carbide

Morvan, E. / Monserrat, J. / Rebollo, J. / Flores, D. / Jorda, X. / Locatelli, M. L. / Ottaviani, L.

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Document information

Title:

Stoichiometric Disturbances in Ion Implanted Silicon Carbide

Contributors:

Morvan, E. (author) / Monserrat, J. (author) / Rebollo, J. (author) / Flores, D. (author) / Jorda, X. (author) / Locatelli, M. L. (author) / Ottaviani, L. (author)

Published in:

MATERIALS SCIENCE FORUM ; 264/268 ; 737-740

Publication date:

1998-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

Weinmann, M. / Zern, A. / Aldinger, F. | British Library Online Contents | 2001

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Calcagno, L. / Grimaldi, M. G. / Musumeci, P. | British Library Online Contents | 1997

Smooth Continuous Films of Stoichiometric Silicon Carbide from Poly(methylsilyne)

Pitcher, M. W. / Joray, S. J. / Bianconi, P. A. | British Library Online Contents | 2004

Range Distributions of Implanted Ions in Silicon Carbide

Janson, M. S. / Linnarsson, M. K. / Hallen, A. et al. | British Library Online Contents | 2002