Effect of Post-Oxidation Annealing on High-Temperature Grown SiO~2/4H-SiC Interface: Fid-Bau Portal

Effect of Post-Oxidation Annealing on High-Temperature Grown SiO~2/4H-SiC Interface

Moon, J.H. / Cheong, K.Y. / Song, H.K. / Yim, J.H. / Oh, M.S. / Lee, J.H. / Bahng, W. / Kim, N.K. / Kim, H.J.

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Effect of Post-Oxidation Annealing on High-Temperature Grown SiO~2/4H-SiC Interface

Moon, J.H. / Cheong, K.Y. / Song, H.K. / Yim, J.H. / Oh, M.S. / Lee, J.H. / Bahng, W. / Kim, N.K. / Kim, H.J.

Effect of Post-Oxidation Annealing on High-Temperature Grown SiO~2/4H-SiC Interface

Moon, J.H. / Cheong, K.Y. / Song, H.K. / Yim, J.H. / Oh, M.S. / Lee, J.H. / Bahng, W. / Kim, N.K. / Kim, H.J.

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Document information

Title:

Effect of Post-Oxidation Annealing on High-Temperature Grown SiO~2/4H-SiC Interface

Contributors:

Moon, J.H. (author) / Cheong, K.Y. (author) / Song, H.K. (author) / Yim, J.H. (author) / Oh, M.S. (author) / Lee, J.H. (author) / Bahng, W. (author) / Kim, N.K. (author) / Kim, H.J. (author)

Published in:

MATERIALS SCIENCE FORUM ; 600/603 ; 731-734

Publication date:

2009-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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