Minority Carrier Lifetime Measurements in 6H-SiC Using the Photoconductive Decay Technique: Fid-Bau Portal

Minority Carrier Lifetime Measurements in 6H-SiC Using the Photoconductive Decay Technique

Zhou, W. / Khlebnikov, I. / Sudarshan, T. S. / Capano, M. A. / Mitchel, W. C.

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Minority Carrier Lifetime Measurements in 6H-SiC Using the Photoconductive Decay Technique

Zhou, W. / Khlebnikov, I. / Sudarshan, T. S. / Capano, M. A. / Mitchel, W. C.

Minority Carrier Lifetime Measurements in 6H-SiC Using the Photoconductive Decay Technique

Zhou, W. / Khlebnikov, I. / Sudarshan, T. S. / Capano, M. A. / Mitchel, W. C.

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Title:

Minority Carrier Lifetime Measurements in 6H-SiC Using the Photoconductive Decay Technique

Contributors:

Zhou, W. (author) / Khlebnikov, I. (author) / Sudarshan, T. S. (author) / Capano, M. A. (author) / Mitchel, W. C. (author) / Pensl, G. / Morkoc, H. / Monemar, B. / Janzen, E.

Published in:

Silicon Carbide, III-Nitrides and Related Materials ; 525-528

MATERIALS SCIENCE FORUM ; 264/268

Publication date:

1998-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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