Characterization of 4H-SiC Epitaxial Layers by Microwave Photoconductivity Decay

Kumar, R. J. / Losee, P. A. / Li, C. et al. | British Library Online Contents | 2005

Characterization of the Excess Carrier Lifetime of As-Grown and Electron Irradiated Epitaxial p-Type 4H-SiC Layers by the Microwave Photoconductivity Decay Method

Matsushita, Y. / Kato, M. / Ichimura, M. et al. | British Library Online Contents | 2010

Minority Carrier Lifetime Measurements in 6H-SiC Using the Photoconductive Decay Technique

Zhou, W. / Khlebnikov, I. / Sudarshan, T. S. et al. | British Library Online Contents | 1998

Carrier Lifetime Analysis by Microwave Photoconductive Decay (mu-PCD) for 4H SiC Epitaxial Wafers

Chung, G. Y. / Loboda, M. J. / MacMillan, M. F. et al. | British Library Online Contents | 2007

Excess Carrier Lifetime Mapping for Bulk SiC Wafers by Microwave Photoconductivity Decay Method and Its Relationship with Structural Defect Distribution

Kato, M. / Ichimura, M. / Arai, E. et al. | British Library Online Contents | 2004