Formation of ultra shallow donors in silicon by long-term-annealing at 470 �C: Fid-Bau Portal

Formation of ultra shallow donors in silicon by long-term-annealing at 470 C

Aaberg, D. / Hallberg, T. / Svensson, B. G. / Lindstroem, J. L. / Kleverman, M.

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Formation of ultra shallow donors in silicon by long-term-annealing at 470 C

Aaberg, D. / Hallberg, T. / Svensson, B. G. / Lindstroem, J. L. / Kleverman, M.

Formation of ultra shallow donors in silicon by long-term-annealing at 470 C

Aaberg, D. / Hallberg, T. / Svensson, B. G. / Lindstroem, J. L. / Kleverman, M.

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Check availability in my library

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Document information

Title:

Formation of ultra shallow donors in silicon by long-term-annealing at 470 C

Contributors:

Aaberg, D. (author) / Hallberg, T. (author) / Svensson, B. G. (author) / Lindstroem, J. L. (author) / Kleverman, M. (author)

Published in:

MATERIALS SCIENCE FORUM ; 258/263 ; 385-390

Publication date:

1997-01-01

Size:

6 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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