Formation of ultra-shallow p+/n junctions in silicon-on-insulator (SOI) substrate using laser annealing: Fid-Bau Portal

Formation of ultra-shallow p+/n junctions in silicon-on-insulator (SOI) substrate using laser annealing

Ong, K. K. / Pey, K. L. / Lee, P. S. / Wee, A. T. / Chong, Y. F. / Yeo, K. L. / Wang, X. C.

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Formation of ultra-shallow p+/n junctions in silicon-on-insulator (SOI) substrate using laser annealing

Ong, K. K. / Pey, K. L. / Lee, P. S. / Wee, A. T. / Chong, Y. F. / Yeo, K. L. / Wang, X. C.

Formation of ultra-shallow p+/n junctions in silicon-on-insulator (SOI) substrate using laser annealing

Ong, K. K. / Pey, K. L. / Lee, P. S. / Wee, A. T. / Chong, Y. F. / Yeo, K. L. / Wang, X. C.

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Title:

Formation of ultra-shallow p+/n junctions in silicon-on-insulator (SOI) substrate using laser annealing

Contributors:

Ong, K. K. (author) / Pey, K. L. (author) / Lee, P. S. (author) / Wee, A. T. (author) / Chong, Y. F. (author) / Yeo, K. L. (author) / Wang, X. C. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 114/115 ; 25-28

Publication date:

2004-01-01

Size:

4 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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