Ion dechanneling studies of defects in an ion-beam-synthesized epilayer sandwich system: Si(111)/CoSi~2/Si: Fid-Bau Portal

Ion dechanneling studies of defects in an ion-beam-synthesized epilayer sandwich system: Si(111)/CoSi~2/Si

Satyam, P. V. / Sekar, K. / Kuri, G. / Sundaravel, B. / Mahapatra, D. P. / Dev, B. N.

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Ion dechanneling studies of defects in an ion-beam-synthesized epilayer sandwich system: Si(111)/CoSi~2/Si

Satyam, P. V. / Sekar, K. / Kuri, G. / Sundaravel, B. / Mahapatra, D. P. / Dev, B. N.

Ion dechanneling studies of defects in an ion-beam-synthesized epilayer sandwich system: Si(111)/CoSi~2/Si

Satyam, P. V. / Sekar, K. / Kuri, G. / Sundaravel, B. / Mahapatra, D. P. / Dev, B. N.

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Title:

Ion dechanneling studies of defects in an ion-beam-synthesized epilayer sandwich system: Si(111)/CoSi~2/Si

Contributors:

Satyam, P. V. (author) / Sekar, K. (author) / Kuri, G. (author) / Sundaravel, B. (author) / Mahapatra, D. P. (author) / Dev, B. N. (author)

Published in:

APPLIED SURFACE SCIENCE ; 125 ; 173-177

Publication date:

1998-01-01

Size:

5 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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