Epitaxial growth of �-SiC on silicon by bias-assisted hot filament chemical vapor deposition from solid graphite and silicon sources: Fid-Bau Portal

Epitaxial growth of -SiC on silicon by bias-assisted hot filament chemical vapor deposition from solid graphite and silicon sources

Woo, H. K. / Lee, C. S. / Bello, I. / Lee, S. T.

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Epitaxial growth of -SiC on silicon by bias-assisted hot filament chemical vapor deposition from solid graphite and silicon sources

Woo, H. K. / Lee, C. S. / Bello, I. / Lee, S. T.

Epitaxial growth of -SiC on silicon by bias-assisted hot filament chemical vapor deposition from solid graphite and silicon sources

Woo, H. K. / Lee, C. S. / Bello, I. / Lee, S. T.

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Check availability in my library

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Document information

Title:

Epitaxial growth of -SiC on silicon by bias-assisted hot filament chemical vapor deposition from solid graphite and silicon sources

Contributors:

Woo, H. K. (author) / Lee, C. S. (author) / Bello, I. (author) / Lee, S. T. (author)

Published in:

JOURNAL OF MATERIALS RESEARCH -PITTSBURGH- ; 13 ; 1738-1740

Publication date:

1998-01-01

Size:

3 pages

ISSN:

0884-2914

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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