Comparison of ICl- and IBr-based plasma chemistries for inductively coupled plasma etching of GaN, InN and AlN: Fid-Bau Portal

Comparison of ICl- and IBr-based plasma chemistries for inductively coupled plasma etching of GaN, InN and AlN

Hahn, Y.B. / Hays, D.C. / Cho, H. / Jung, K.B. / Abernathy, C.R. / Donovan, S.M. / Pearton, S.J. / Han, J. / Shul, R.J.

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Comparison of ICl- and IBr-based plasma chemistries for inductively coupled plasma etching of GaN, InN and AlN

Hahn, Y.B. / Hays, D.C. / Cho, H. / Jung, K.B. / Abernathy, C.R. / Donovan, S.M. / Pearton, S.J. / Han, J. / Shul, R.J.

Comparison of ICl- and IBr-based plasma chemistries for inductively coupled plasma etching of GaN, InN and AlN

Hahn, Y.B. / Hays, D.C. / Cho, H. / Jung, K.B. / Abernathy, C.R. / Donovan, S.M. / Pearton, S.J. / Han, J. / Shul, R.J.

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Document information

Title:

Comparison of ICl- and IBr-based plasma chemistries for inductively coupled plasma etching of GaN, InN and AlN

Contributors:

Hahn, Y.B. (author) / Hays, D.C. (author) / Cho, H. (author) / Jung, K.B. (author) / Abernathy, C.R. (author) / Donovan, S.M. (author) / Pearton, S.J. (author) / Han, J. (author) / Shul, R.J. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 60 ; 95 - 100

Publication date:

1999-01-01

Size:

6 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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