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Depth profiling of defects in nitrogen implanted silicon using a slow positron beam

Taylor, J.W. / Saleh, A.S. / Rice-Evans, P.C. / Knights, A.P. / Jeynes, C.

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Depth profiling of defects in nitrogen implanted silicon using a slow positron beam

Taylor, J.W. / Saleh, A.S. / Rice-Evans, P.C. / Knights, A.P. / Jeynes, C.

Depth profiling of defects in nitrogen implanted silicon using a slow positron beam

Taylor, J.W. / Saleh, A.S. / Rice-Evans, P.C. / Knights, A.P. / Jeynes, C.

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Check availability in my library

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Document information

Title:

Depth profiling of defects in nitrogen implanted silicon using a slow positron beam

Contributors:

Taylor, J.W. (author) / Saleh, A.S. (author) / Rice-Evans, P.C. (author) / Knights, A.P. (author) / Jeynes, C. (author)

Published in:

APPLIED SURFACE SCIENCE ; 149 ; 175-180

Publication date:

1999-01-01

Size:

6 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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