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Effect of the transient enhanced diffusion of boron on the characteristics of sub-0.1 @mm n-MOSFETS

Kumashiro, S.

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Effect of the transient enhanced diffusion of boron on the characteristics of sub-0.1 @mm n-MOSFETS

Kumashiro, S.

Effect of the transient enhanced diffusion of boron on the characteristics of sub-0.1 @mm n-MOSFETS

Kumashiro, S.

Access

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Effect of the transient enhanced diffusion of boron on the characteristics of sub-0.1 @mm n-MOSFETS

Contributors:

Kumashiro, S. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 71 ; 148 - 154

Publication date:

2000-01-01

Size:

7 pages

ISSN:

Type of media:

Article (Journal)

Type of material:

Print

Language:

English

Classification:

© Metadata Copyright the British Library Board and other contributors. All rights reserved.

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