Influence of R.T.A. conditions on the transient-enhanced diffusion of boron implants through Oxyd into Silicon: Fid-Bau Portal

Fachinformationsdienst BAUdigital

A platform for research: civil engineering, architecture and urbanism

Influence of R.T.A. conditions on the transient-enhanced diffusion of boron implants through Oxyd into Silicon

Kaabi, L. / Institut National des Sciences Appliquees de Lyon / L'Association des Doctorants de l'Insa de Lyon / Le Departement des Etudes Doctorales de l'Insa de Lyon

Access

Check availability in my library

Order at Subito €

Page navigation

Document information

Export, share and cite

Influence of R.T.A. conditions on the transient-enhanced diffusion of boron implants through Oxyd into Silicon

Kaabi, L. / Institut National des Sciences Appliquees de Lyon / L'Association des Doctorants de l'Insa de Lyon / Le Departement des Etudes Doctorales de l'Insa de Lyon

Influence of R.T.A. conditions on the transient-enhanced diffusion of boron implants through Oxyd into Silicon

Kaabi, L. / Institut National des Sciences Appliquees de Lyon / L'Association des Doctorants de l'Insa de Lyon / Le Departement des Etudes Doctorales de l'Insa de Lyon

Access

Check availability in my library

Order at Subito €

Page navigation

Document information

Export, share and cite

Document information

Title:

Influence of R.T.A. conditions on the transient-enhanced diffusion of boron implants through Oxyd into Silicon

Contributors:

Kaabi, L. (author) / Institut National des Sciences Appliquees de Lyon / L'Association des Doctorants de l'Insa de Lyon / Le Departement des Etudes Doctorales de l'Insa de Lyon

Conference:

1 Colloque des doctorants ; 1994 ; Lyons; France

Published in:

1 Colloque des doctorants ; 257-258

COLLOQUE DES DOCTORANTS- INSTITUT NATIONAL DES SCIENCES APPLIQUEES DE LYON

Publication date:

1994-01-01

Size:

2 pages

Remarks:

In French and English

ISBN:

Type of media:

Conference paper

Type of material:

Print

Language:

French

Keywords:

doctorants , INSA , ADIL , DED

© Metadata Copyright the British Library Board and other contributors. All rights reserved.

Similar titles

Suppression of boron transient enhanced diffusion in silicon and silicon germanium by fluorine implantation

El Mubarek, H. A. / Wang, Y. / Price, R. et al. | British Library Online Contents | 2005

Transient-Enhanced Diffusion of Boron in SiC

Laube, M. / Pensl, G. | British Library Online Contents | 2000

Modeling of the transient enhanced diffusion of boron implanted into preamorphized silicon: the case of BF2+ implantation

Dusch, A. / Marcon, J. / Masmoudi, K. et al. | British Library Online Contents | 2001

A Comparison of Transient Boron Diffusion in Silicon, Silicon Carbide and Diamond

Linnarsson, M.K. / Isberg, J. / Schoner, A. et al. | British Library Online Contents | 2009

Cluster ripening and transient enhanced diffusion in silicon

Cowern, N. E. / Mannino, G. / Stolk, P. A. et al. | British Library Online Contents | 1999