Modelisation of extended defects to simulate the transient enhanced diffusion of boron

Lampin, E. / Senez, V. / Claverie, A. | British Library Online Contents | 2000

Suppression of boron transient enhanced diffusion in silicon and silicon germanium by fluorine implantation

El Mubarek, H. A. / Wang, Y. / Price, R. et al. | British Library Online Contents | 2005

Influence of R.T.A. conditions on the transient-enhanced diffusion of boron implants through Oxyd into Silicon

Kaabi, L. / Institut National des Sciences Appliquees de Lyon / L'Association des Doctorants de l'Insa de Lyon et al. | British Library Conference Proceedings | 1994

Effect of the transient enhanced diffusion of boron on the characteristics of sub-0.1 @mm n-MOSFETS

Kumashiro, S. | British Library Online Contents | 2000

Modeling of the transient enhanced diffusion of boron implanted into preamorphized silicon: the case of BF2+ implantation

Dusch, A. / Marcon, J. / Masmoudi, K. et al. | British Library Online Contents | 2001