Suppression of boron transient enhanced diffusion in silicon and silicon germanium by fluorine implantation: Fid-Bau Portal

Suppression of boron transient enhanced diffusion in silicon and silicon germanium by fluorine implantation

El Mubarek, H. A. / Wang, Y. / Price, R. / Bonar, J. M. / Zhang, J. / Hemment, P. L. / Ashburn, P.

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Suppression of boron transient enhanced diffusion in silicon and silicon germanium by fluorine implantation

El Mubarek, H. A. / Wang, Y. / Price, R. / Bonar, J. M. / Zhang, J. / Hemment, P. L. / Ashburn, P.

Suppression of boron transient enhanced diffusion in silicon and silicon germanium by fluorine implantation

El Mubarek, H. A. / Wang, Y. / Price, R. / Bonar, J. M. / Zhang, J. / Hemment, P. L. / Ashburn, P.

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Document information

Title:

Suppression of boron transient enhanced diffusion in silicon and silicon germanium by fluorine implantation

Contributors:

El Mubarek, H. A. (author) / Wang, Y. (author) / Price, R. (author) / Bonar, J. M. (author) / Zhang, J. (author) / Hemment, P. L. (author) / Ashburn, P. (author)

Published in:

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 8 ; 103-109

Publication date:

2005-01-01

Size:

7 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

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