Evolution of vacancy-like defects in helium-implanted (100) silicon studied by thermal desorption spectrometry: Fid-Bau Portal

Evolution of vacancy-like defects in helium-implanted (100) silicon studied by thermal desorption spectrometry

Corni, F. / Calzolari, G. / Gambetta, F. / Nobili, C. / Tonini, R. / Zapparoli, M.

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Evolution of vacancy-like defects in helium-implanted (100) silicon studied by thermal desorption spectrometry

Corni, F. / Calzolari, G. / Gambetta, F. / Nobili, C. / Tonini, R. / Zapparoli, M.

Evolution of vacancy-like defects in helium-implanted (100) silicon studied by thermal desorption spectrometry

Corni, F. / Calzolari, G. / Gambetta, F. / Nobili, C. / Tonini, R. / Zapparoli, M.

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Title:

Evolution of vacancy-like defects in helium-implanted (100) silicon studied by thermal desorption spectrometry

Contributors:

Corni, F. (author) / Calzolari, G. (author) / Gambetta, F. (author) / Nobili, C. (author) / Tonini, R. (author) / Zapparoli, M. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 71 ; 207 - 212

Publication date:

2000-01-01

Size:

6 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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