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High Quality SiGe Layer Deposited by a New Ultrahigh Vacuum Chemical Vapor Deposition System

LUO, G. / LIN, X. / CHEN, P. / TSIAN, P.

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High Quality SiGe Layer Deposited by a New Ultrahigh Vacuum Chemical Vapor Deposition System

LUO, G. / LIN, X. / CHEN, P. / TSIAN, P.

High Quality SiGe Layer Deposited by a New Ultrahigh Vacuum Chemical Vapor Deposition System

LUO, G. / LIN, X. / CHEN, P. / TSIAN, P.

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Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

High Quality SiGe Layer Deposited by a New Ultrahigh Vacuum Chemical Vapor Deposition System

Contributors:

LUO, G. (author) / LIN, X. (author) / CHEN, P. (author) / TSIAN, P. (author)

Published in:

JOURNAL OF MATERIALS SCIENCE AND TECHNOLOGY -SHENYANG- ; 16 ; 94-96

Publication date:

2000-01-01

Size:

3 pages

ISSN:

1005-0302

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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