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Interfacial study of Si-Ge multilayers grown using ultrahigh-vacuum chemical vapor deposition

Lian, D. / Wen, H.-C.

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Interfacial study of Si-Ge multilayers grown using ultrahigh-vacuum chemical vapor deposition

Lian, D. / Wen, H.-C.

Interfacial study of Si-Ge multilayers grown using ultrahigh-vacuum chemical vapor deposition

Lian, D. / Wen, H.-C.

Access

Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Interfacial study of Si-Ge multilayers grown using ultrahigh-vacuum chemical vapor deposition

Contributors:

Lian, D. (author) / Wen, H.-C. (author)

Published in:

INTERNATIONAL JOURNAL OF MATERIALS RESEARCH ; 104 ; 542-546

Publication date:

2013-01-01

Size:

5 pages

ISSN:

1862-5282

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 669.9

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Nakahata, T. / Sugihara, K. / Furukawa, T. et al. | British Library Online Contents | 2000

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Cheng, B.-w. / Xue, C.-l. / Luo, L.-p. et al. | British Library Online Contents | 2009

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El Kiadi, I. / Lassri, H. / Benkirane, K. et al. | British Library Online Contents | 2007