A platform for research: civil engineering, architecture and urbanism
Low temperature Si epitaxy in a vertical LPCVD batch reactor
Low temperature Si epitaxy in a vertical LPCVD batch reactor
Low temperature Si epitaxy in a vertical LPCVD batch reactor
Ritter, G. (author) / Harrington, J. (author) / Tillack, B. (author) / Morgenstern, T. (author) / Dietze, G. R. (author) / Radzimski, Z. J. (author)
MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 73 ; 203 - 207
2000-01-01
5 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
British Library Online Contents | 1996
|Local equilibrium phase diagrams: SiC deposition in a hot wall LPCVD reactor
British Library Online Contents | 1994
|Low electrical resistivity polycrystalline SiGe films obtained by vertical LPCVD for MOS devices
British Library Online Contents | 2005
|Homoepitaxial Growth of 4H- and 6H-SiC in a Commercial Horizontal LPCVD Reactor
British Library Online Contents | 1998
|Development of Vertical 3''x2'' LPCVD System for Fast Epitaxial Growth on 4H-SiC
British Library Online Contents | 2012
|