Development of Vertical 3''x2'' LPCVD System for Fast Epitaxial Growth on 4H-SiC: Fid-Bau Portal

Development of Vertical 3''x2'' LPCVD System for Fast Epitaxial Growth on 4H-SiC

Zhao, W.S. / Sun, G.S. / Wu, H.L. / Yan, G.G. / Zheng, L. / Dong, L. / Wang, L. / Liu, X.F. / Yang, L.J.

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Development of Vertical 3''x2'' LPCVD System for Fast Epitaxial Growth on 4H-SiC

Zhao, W.S. / Sun, G.S. / Wu, H.L. / Yan, G.G. / Zheng, L. / Dong, L. / Wang, L. / Liu, X.F. / Yang, L.J.

Development of Vertical 3''x2'' LPCVD System for Fast Epitaxial Growth on 4H-SiC

Zhao, W.S. / Sun, G.S. / Wu, H.L. / Yan, G.G. / Zheng, L. / Dong, L. / Wang, L. / Liu, X.F. / Yang, L.J.

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Document information

Title:

Development of Vertical 3''x2'' LPCVD System for Fast Epitaxial Growth on 4H-SiC

Contributors:

Zhao, W.S. (author) / Sun, G.S. (author) / Wu, H.L. (author) / Yan, G.G. (author) / Zheng, L. (author) / Dong, L. (author) / Wang, L. (author) / Liu, X.F. (author) / Yang, L.J. (author)

Published in:

MATERIALS SCIENCE FORUM ; 717/720 ; 105-108

Publication date:

2012-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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