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Micro-Raman study of stress distribution generated in silicon during proximity rapid thermal diffusion

Nolan, M. / Perova, T. / Moore, R. A. / Moore, C. J. / Berwick, K. / Gamble, H. S.

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Micro-Raman study of stress distribution generated in silicon during proximity rapid thermal diffusion

Nolan, M. / Perova, T. / Moore, R. A. / Moore, C. J. / Berwick, K. / Gamble, H. S.

Micro-Raman study of stress distribution generated in silicon during proximity rapid thermal diffusion

Nolan, M. / Perova, T. / Moore, R. A. / Moore, C. J. / Berwick, K. / Gamble, H. S.

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Access via TIB

Check availability in my library

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Document information

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Document information

Title:

Micro-Raman study of stress distribution generated in silicon during proximity rapid thermal diffusion

Contributors:

Nolan, M. (author) / Perova, T. (author) / Moore, R. A. (author) / Moore, C. J. (author) / Berwick, K. (author) / Gamble, H. S. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 73 ; 168 - 172

Publication date:

2000-01-01

Size:

5 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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