Effect of external stress on creation of buried SiO2 layer in silicon implanted with oxygen: Fid-Bau Portal

Effect of external stress on creation of buried SiO2 layer in silicon implanted with oxygen

Misiuk, A. / Barcz, A. / Ratajczak, J. / Lopez, M. / Romano-Rodriguez, A. / Bak-Misiuk, J. / Surma, H. B. / Jun, J. / Antonova, I. V. / Popov, V. P.

Access

Access via TIB

Check availability in my library

Order at Subito €

Page navigation

Document information

Similar titles

Export, share and cite

Effect of external stress on creation of buried SiO2 layer in silicon implanted with oxygen

Misiuk, A. / Barcz, A. / Ratajczak, J. / Lopez, M. / Romano-Rodriguez, A. / Bak-Misiuk, J. / Surma, H. B. / Jun, J. / Antonova, I. V. / Popov, V. P.

Effect of external stress on creation of buried SiO2 layer in silicon implanted with oxygen

Misiuk, A. / Barcz, A. / Ratajczak, J. / Lopez, M. / Romano-Rodriguez, A. / Bak-Misiuk, J. / Surma, H. B. / Jun, J. / Antonova, I. V. / Popov, V. P.

Access

Access via TIB

Check availability in my library

Order at Subito €

Page navigation

Document information

Similar titles

Export, share and cite

Document information

Title:

Effect of external stress on creation of buried SiO2 layer in silicon implanted with oxygen

Contributors:

Misiuk, A. (author) / Barcz, A. (author) / Ratajczak, J. (author) / Lopez, M. (author) / Romano-Rodriguez, A. (author) / Bak-Misiuk, J. (author) / Surma, H. B. (author) / Jun, J. (author) / Antonova, I. V. (author) / Popov, V. P. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 73 ; 134 - 138

Publication date:

2000-01-01

Size:

5 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

Frantskevich, A. V. / Fedotov, A. K. / Frantskevich, N. V. et al. | British Library Online Contents | 2005

Silicon Carbide Static Induction Transistor with Implanted Buried Gate

Vassilevski, K.V. / Nikitina, I.P. / Horsfall, A.B. et al. | British Library Online Contents | 2009

Effect of uniform stress on silicon implanted with helium, hydrogen and oxygen

Misiuk, A. / Bak-Misiuk, J. / Antonova, I. V. et al. | British Library Online Contents | 2001

Buried-oxide layer formation by high-dose oxygen-ion implantation into Si wafers: SIMOX (separation by implanted oxygen)

Kajiyama, K. | British Library Online Contents | 1995

Dual ion beam analysis of boron implanted SiO2/silicon interface

Hayashi, S. / Yanagihara, K. | British Library Online Contents | 2003