Studies of Damage Accumulation in 4H Silicon Carbide by Ion-Channeling Techniques

Zhang, Y. / Gao, F. / Jiang, W. et al. | British Library Online Contents | 2005

Damage Distributions Induced by Channeling Implantation of Nitrogen into 6H Silicon Carbide

Zolnai, Z. / Khanh, N. Q. / Lohner, T. et al. | British Library Online Contents | 2003

Defect annealing in ion implanted silicon carbide

Calcagno, L. / Grimaldi, M. G. / Musumeci, P. | British Library Online Contents | 1997

Oxygen-Related Defect Centers in 4H Silicon Carbide

Dalibor, T. / Pensl, G. / Yamamoto, T. et al. | British Library Online Contents | 1998

Large Diameter, Low Defect Silicon Carbide Boule Growth

Carter, C. H. / Glass, R. / Brady, M. et al. | British Library Online Contents | 2001