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Studies of Damage Accumulation in 4H Silicon Carbide by Ion-Channeling Techniques

Zhang, Y. / Gao, F. / Jiang, W. / McCready, D. E. / Weber, W. J.

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Studies of Damage Accumulation in 4H Silicon Carbide by Ion-Channeling Techniques

Zhang, Y. / Gao, F. / Jiang, W. / McCready, D. E. / Weber, W. J.

Studies of Damage Accumulation in 4H Silicon Carbide by Ion-Channeling Techniques

Zhang, Y. / Gao, F. / Jiang, W. / McCready, D. E. / Weber, W. J.

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Order at Subito €

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Document information

Title:

Studies of Damage Accumulation in 4H Silicon Carbide by Ion-Channeling Techniques

Contributors:

Zhang, Y. (author) / Gao, F. (author) / Jiang, W. (author) / McCready, D. E. (author) / Weber, W. J. (author)

Published in:

MATERIALS SCIENCE FORUM ; 475/479 ; 1341-1344

Publication date:

2005-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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