3C-SiC(100) Homoepitaxial Growth by Chemical Vapor Deposition and Schottky Barrier Junction Characteristics: Fid-Bau Portal

3C-SiC(100) Homoepitaxial Growth by Chemical Vapor Deposition and Schottky Barrier Junction Characteristics

Ishida, Y. / Kushibe, M. / Takahashi, T. / Okumura, H. / Yoshida, S.

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3C-SiC(100) Homoepitaxial Growth by Chemical Vapor Deposition and Schottky Barrier Junction Characteristics

Ishida, Y. / Kushibe, M. / Takahashi, T. / Okumura, H. / Yoshida, S.

3C-SiC(100) Homoepitaxial Growth by Chemical Vapor Deposition and Schottky Barrier Junction Characteristics

Ishida, Y. / Kushibe, M. / Takahashi, T. / Okumura, H. / Yoshida, S.

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Title:

3C-SiC(100) Homoepitaxial Growth by Chemical Vapor Deposition and Schottky Barrier Junction Characteristics

Contributors:

Ishida, Y. (author) / Kushibe, M. (author) / Takahashi, T. (author) / Okumura, H. (author) / Yoshida, S. (author)

Published in:

MATERIALS SCIENCE FORUM ; 389/393 ; 275-278

Publication date:

2002-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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