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A platform for research: civil engineering, architecture and urbanism
4H-SiC Substrate Orientation Effects on Hydrogen Etching and Epitaxial Growth
4H-SiC Substrate Orientation Effects on Hydrogen Etching and Epitaxial Growth
4H-SiC Substrate Orientation Effects on Hydrogen Etching and Epitaxial Growth
Landini, B. E. (author) / Brandes, G. R. (author)
MATERIALS SCIENCE FORUM ; 338/342 ; 185-188
2000-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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Effects of HCl/H~2 pre-growth etching on quality of 6H-SiC epitaxial layers
| British Library Conference Proceedings | 1998