4H-SiC CVD Epitaxial Layers with Improved Structural Quality Grown on SiC Wafers with Reduced Micropipe Density: Fid-Bau Portal

4H-SiC CVD Epitaxial Layers with Improved Structural Quality Grown on SiC Wafers with Reduced Micropipe Density

Kalinina, E. V. / Zubrilov, A. / Solov'ev, V. / Kuznetsov, N. / Hallen, A. / Konstantinov, A. / Karlsson, S. / Rendakova, S. / Dmitriev, V.

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4H-SiC CVD Epitaxial Layers with Improved Structural Quality Grown on SiC Wafers with Reduced Micropipe Density

Kalinina, E. V. / Zubrilov, A. / Solov'ev, V. / Kuznetsov, N. / Hallen, A. / Konstantinov, A. / Karlsson, S. / Rendakova, S. / Dmitriev, V.

4H-SiC CVD Epitaxial Layers with Improved Structural Quality Grown on SiC Wafers with Reduced Micropipe Density

Kalinina, E. V. / Zubrilov, A. / Solov'ev, V. / Kuznetsov, N. / Hallen, A. / Konstantinov, A. / Karlsson, S. / Rendakova, S. / Dmitriev, V.

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Title:

4H-SiC CVD Epitaxial Layers with Improved Structural Quality Grown on SiC Wafers with Reduced Micropipe Density

Contributors:

Kalinina, E. V. (author) / Zubrilov, A. (author) / Solov'ev, V. (author) / Kuznetsov, N. (author) / Hallen, A. (author) / Konstantinov, A. (author) / Karlsson, S. (author) / Rendakova, S. (author) / Dmitriev, V. (author)

Published in:

MATERIALS SCIENCE FORUM ; 338/342 ; 505-508

Publication date:

2000-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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