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Low pressure chemical vapor deposition growth of silicon quantum dots on insulator for nanoelectronics devices

Baron, T. / Martin, F. / Mur, P. / Wyon, C. / Dupuy, M. / Busseret, C. / Souifi, A. / Guillot, G.

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Low pressure chemical vapor deposition growth of silicon quantum dots on insulator for nanoelectronics devices

Baron, T. / Martin, F. / Mur, P. / Wyon, C. / Dupuy, M. / Busseret, C. / Souifi, A. / Guillot, G.

Low pressure chemical vapor deposition growth of silicon quantum dots on insulator for nanoelectronics devices

Baron, T. / Martin, F. / Mur, P. / Wyon, C. / Dupuy, M. / Busseret, C. / Souifi, A. / Guillot, G.

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Document information

Title:

Low pressure chemical vapor deposition growth of silicon quantum dots on insulator for nanoelectronics devices

Contributors:

Baron, T. (author) / Martin, F. (author) / Mur, P. (author) / Wyon, C. (author) / Dupuy, M. (author) / Busseret, C. (author) / Souifi, A. (author) / Guillot, G. (author)

Published in:

APPLIED SURFACE SCIENCE ; 164 ; 29-34

Publication date:

2000-01-01

Size:

6 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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