Characterization of 4H-SiC Epilayers Grown at a High Deposition Rate: Fid-Bau Portal

Characterization of 4H-SiC Epilayers Grown at a High Deposition Rate

Tsuchida, H. / Tsuji, T. / Kamata, I. / Jikimoto, T. / Fujisawa, H. / Ogino, S. / Izumi, K.

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Characterization of 4H-SiC Epilayers Grown at a High Deposition Rate

Tsuchida, H. / Tsuji, T. / Kamata, I. / Jikimoto, T. / Fujisawa, H. / Ogino, S. / Izumi, K.

Characterization of 4H-SiC Epilayers Grown at a High Deposition Rate

Tsuchida, H. / Tsuji, T. / Kamata, I. / Jikimoto, T. / Fujisawa, H. / Ogino, S. / Izumi, K.

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Title:

Characterization of 4H-SiC Epilayers Grown at a High Deposition Rate

Contributors:

Tsuchida, H. (author) / Tsuji, T. (author) / Kamata, I. (author) / Jikimoto, T. (author) / Fujisawa, H. (author) / Ogino, S. (author) / Izumi, K. (author)

Published in:

MATERIALS SCIENCE FORUM ; 353/356 ; 131-134

Publication date:

2001-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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