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    Crystal Defects as Source of Anomalous Forward Voltage Increase of 4H-SiC Diodes

    New search for: Bergman, J. P.
    New search for: Lendenmann, H.
    New search for: Nilsson, P. A.
    New search for: Lindefelt, U.
    New search for: Skytt, P.

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    Crystal Defects as Source of Anomalous Forward Voltage Increase of 4H-SiC Diodes

    New search for: Bergman, J. P.
    New search for: Lendenmann, H.
    New search for: Nilsson, P. A.
    New search for: Lindefelt, U.
    New search for: Skytt, P.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Crystal Defects as Source of Anomalous Forward Voltage Increase of 4H-SiC Diodes

    New search for: Bergman, J. P.
    New search for: Lendenmann, H.
    New search for: Nilsson, P. A.
    New search for: Lindefelt, U.
    New search for: Skytt, P.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Crystal Defects as Source of Anomalous Forward Voltage Increase of 4H-SiC Diodes

    Contributors:

    Bergman, J. P. (author) / Lendenmann, H. (author) / Nilsson, P. A. (author) / Lindefelt, U. (author) / Skytt, P. (author)

    Published in:

    MATERIALS SCIENCE FORUM ; 353/356 ; 299-302

    Publication date:

    2001-01-01

    Size:

    4 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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