A platform for research: civil engineering, architecture and urbanism
High Power 4H-SiC PiN Diodes with Minimal Forward Voltage Drift
High Power 4H-SiC PiN Diodes with Minimal Forward Voltage Drift
High Power 4H-SiC PiN Diodes with Minimal Forward Voltage Drift
Das, M. K. (author) / Sumakeris, J. J. (author) / Paisley, M. J. (author) / Powell, A. (author)
MATERIALS SCIENCE FORUM ; 457/460 ; 1105-1108
2004-01-01
4 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Study of Forward Voltage Drift in Diffused SiC PiN Diodes Doped by Al or B
British Library Online Contents | 2005
|Evolution of Drift-Free, High Power 4H-SiC PiN Diodes
British Library Online Contents | 2006
|Crystal Defects as Source of Anomalous Forward Voltage Increase of 4H-SiC Diodes
British Library Online Contents | 2001
|Correlation between Carrier Recombination Lifetime and Forward Voltage Drop in 4H-SiC PiN Diodes
British Library Online Contents | 2010
|Propagation of Current-Induced Stacking Faults and Forward Voltage Degradation in 4H-SiC PiN Diodes
British Library Online Contents | 2002
|